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| 2N4856A/4857A/4858A Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number 2N4856A 2N4857A 2N4858A VGS(off) (V) -4 to -10 -2 to -6 -0.8 to -4 V(BR)GSS Min (V) -40 -40 -40 IDSS Min (mA) 50 20 8 rDS(on) Max (W) 25 40 60 ID(off) Typ (pA) 5 5 5 tON Typ (ns) 4 4 4 FEATURES D Low On-Resistance: 2N4856A <25 W D Fast Switching--tON: 4 ns D High Off-Isolation--I D(off): 5 pA D Low Capacitance: 3 pF D Low Insertion Loss BENEFITS D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response Eliminates Additional Buffering APPLICATIONS D D D D D Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters DESCRIPTION The 2N4856A/4857A/4858A all-purpose JFET analog switches offer low on-resistance, low capacitance, good isolation, and fast switching. Hermetically-sealed TO-206AA (TO-18) packaging allows full military processing (see Military Information). For similar products in TO-226AA (TO-92) and SOT-23 packages, see the J/SST111 series data sheet. For similar duals, see the 2N5564/5565/5566 data sheet. TO-206AA (TO-18) S 1 2 D Top View 3 G and Case Document Number: 70243 S-04028--Rev. D, 04-Jun-01 www.vishay.com 7-1 2N4856A/4857A/4858A Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage : (2N4856A-58A) . . . . . . . . . . . . . . . -40 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 seconds) . . . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 200_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8 W Notes a. Derate 10 mW/_C for TC > 25_C SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N4856A 2N4857A 2N4858A Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc Symbol Test Conditions Typa Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID(off) IG = -1 mA , VDS = 0 V VDS = 15 V, ID = 0.5 nA VDS = 15 V, VGS = 0 V VGS = -20 V, VDS = 0 V TA = 150_C VDG = 15 V, ID = 10 mA VDS = 15 V, VGS = -10 V -55 -40 -4 50 -10 -40 -2 20 -250 -500 -6 100 -250 -500 -40 V -0.8 8 -4 80 -250 -500 mA pA nA pA nA -5 -13 -5 5 13 0.25 0.35 0.5 250 500 250 500 250 500 0.5 Drain Cutoff Current TA = 150_C ID = 5 mA Drain-Source On-Voltage VDS(on) VGS = 0 V ID = 10 mA ID = 20 mA 0.5 0.75 25 40 60 V Drain-Source On-Resistancec Gate-Source Forward Voltagec rDS(on) VGS(F) VGS = 0 V, ID = 1 mA IG = 1 mA , VDS = 0 V 0.7 W V Dynamic Common-Source Forward Transconductancec Common-Source Output Conductancec Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltagec gfs gos rds(on) Ciss Crss en VDS = 0 V, VGS = -10 V f = 1 MHz VDS = 20 V, ID = 1 mA f = 1 kHz 6 25 25 7 3 3 10 4 40 10 3.5 60 10 pF 3.5 nV Hz mS mS W VGS = 0 V, ID = 0 mA f = 1 kHz VDS = 10 V, ID = 10 mA f = 1 kHz Switching td(on) Turn-On Time Turn-Off Time tr tOFF VDD = 10 V, VGSH = 0 V See Switching Circuit 2 2 12 5 3 20 6 4 40 8 8 80 NCB ns Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v100 ms duty cycle v10%. c. This parameter not registered with JEDEC. www.vishay.com 7-2 Document Number: 70243 S-04028--Rev. D, 04-Jun-01 2N4856A/4857A/4858A Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage rDS @ ID = 1 mA, VGS = 0 IDSS @ VDS = 20 V, VGS = 0 80 IDSS 120 160 100 rDS(on) - Drain-Source On-Resistance ( ) 200 rDS(on) - Drain-Source On-Resistance ( ) IDSS - Saturation Drain Current (mA) 100 On-Resistance vs. Drain Current TA = 25_C 80 VGS(off) = -2 V 60 60 rDS 40 80 40 -4 V -8 V 20 40 20 0 0 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) -2 -10 0 0 1 10 ID - Drain Current (mA) 100 On-Resistance vs. Temperature 200 rDS(on) - Drain-Source On-Resistance ( ) ID = 1 mA rDS changes X 0.7%/_C 160 Switching Time (ns) 4 5 Turn-On Switching tr approximately independent of ID VDG = 5 V, RG = 50 W VGS(L) = -10 V tr td(on) @ ID = 12 mA 2 120 3 80 VGS(off) = -2 V -4 V 40 -8 V 0 -55 -35 -15 5 25 45 65 85 105 125 TA - Temperature (_C) 1 td(on) @ ID = 3 mA 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) Turn-Off Switching 30 td(off) independent of device VGS(off) VDG = 5 V, VGS(L) = -10 V 24 Switching Time (ns) Capacitance (pF) 24 30 Capacitance vs. Gate-Source Voltage f = 1 MHz 18 tf 12 td(off) 6 VGS(off) = -8 V 0 0 2 4 VGS(off) = -2 V 18 12 Ciss @ VDS = 0 V 6 Crss @ VDS = 0 V 0 6 8 10 0 -4 -8 -12 -16 -20 ID - Drain Current (mA) Document Number: 70243 S-04028--Rev. D, 04-Jun-01 VGS - Gate-Source Voltage (V) www.vishay.com 7-3 2N4856A/4857A/4858A Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Noise Voltage vs. Frequency 100 VDG = 10 V gfs - Forward Transconductance (mS) 40 Hz Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 50 gfs and gos @ VDS = 20 V VGS = 0 V, f = kHz 500 gos - Output Conductance (S) 400 gos 300 en - Noise Voltage nV / 30 gfs 10 ID = 1 mA 20 200 ID = 10 mA 10 100 1 10 100 1k f - Frequency (Hz) 10 k 100 k 0 0 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) -2 -10 0 10 nA Gate Leakage Current IGSS @ 25_C 100 Common-Gate Input Admittance VDG = 10 V ID = 10 mA TA = 25_C 1 nA IG - Gate Leakage TA = 125_C ID = 10 mA gig 100 pA 1 mA (mS) 1 mA 10 big 10 pA TA = 25_C 1 pA 10 mA IGSS @ 25_C 1 IG(on) @ ID 0.1 pA 0 6 12 18 24 30 0.1 100 200 500 1000 VDG - Drain-Gate Voltage (V) f - Frequency (MHz) Common-Gate Forward Admittance 100 VDG = 10 V ID = 10 mA TA = 25_C -gfg 10 (mS) (mS) gfg bfg 1 10 Common-Gate Reverse Admittance VDG = 10 V ID = 10 mA TA = 25_C -brg +grg -grg 0.1 1 0.1 100 200 500 f - Frequency (MHz) 1000 0.01 100 200 500 f - Frequency (MHz) 1000 www.vishay.com 7-4 Document Number: 70243 S-04028--Rev. D, 04-Jun-01 2N4856A/4857A/4858A Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Gate Output Admittance 100 VDG = 10 V ID = 10 mA TA = 25_C ID - Drain Current (mA) bog 10 (mS) 20 VGS(off) = -2 V 16 Output Characteristics 12 VGS = 0 V -0.2 V -0.4 V gog 1 8 -0.6 V -0.8 V 4 -1.0 V -1.2 V 0.1 100 200 500 1000 0 0 0.2 0.4 0.6 0.8 1.0 f - Frequency (MHz) VDS - Drain-Source Voltage (V) Output Characteristics 40 VGS(off) = -4 V 32 ID - Drain Current (mA) ID - Drain Current (mA) 40 50 Output Characteristics VGS(off) = -8 V -1 V VGS = 0 V 30 -2 V -3 V 20 -4 V -5 V -6 V -3.0 V 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.2 0.4 0.6 0.8 1.0 24 VGS = 0 V -0.5 V -1.0 V 16 -1.5 V -2.0 V 8 -2.5 V 10 VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V) VDD SWITCHING TIME TEST CIRCUIT 2N4856A VGS(L) RL* ID(on) *Non-inductive -10 V 464 W 20 mA RL OUT VGS(H) VGS(L) 1 51 2N4857A -6 V 953 W 10 mA 2N4858A -4 V 1910 W 5 mA INPUT PULSE Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Document Number: 70243 S-04028--Rev. D, 04-Jun-01 SAMPLING SCOPE Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF VIN Scope 51 www.vishay.com 7-5 |
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